Infineon IPB80N06S2-09: 60V 80A N-Channel Power MOSFET Datasheet and Application Overview

The Infineon IPB80N06S2-09 is a N-channel power MOSFET engineered to deliver high efficiency and robustness in demanding power conversion applications. As part of Infineon's extensive portfolio of automotive-grade components, this MOSFET is optimized for low on-state resistance and fast switching performance, making it an ideal choice for a wide range of industrial, automotive, and consumer electronics systems.

Key Electrical Characteristics and Features

Housed in a TO-263 (D2PAK) package, the IPB80N06S2-09 is designed for a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 80A at a case temperature of 25°C. Its standout feature is an exceptionally low typical on-state resistance (RDS(on)) of just 9.0 mΩ at 10V gate drive. This low RDS(on) is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation.

The device is also characterized by its low gate charge (QG) and fast switching speed, enabling efficient operation at high frequencies. This is particularly important in switch-mode power supplies (SMPS), motor control circuits, and DC-DC converters where switching losses can significantly impact overall performance. Furthermore, the MOSFET offers avalanche ruggedness and is qualified according to automotive standards, ensuring high reliability under harsh operating conditions.

Typical Applications

The combination of high current handling, low resistance, and robust packaging makes the IPB80N06S2-09 suitable for a diverse set of applications:

Automotive Systems: Used in electronic power steering (EPS), transmission control units, and electric brake systems where reliability and efficiency are paramount.

Power Management: Ideal for synchronous rectification in switched-mode power supplies (SMPS) and voltage regulation modules (VRM) for servers and computing equipment.

Motor Drive and Control: A perfect fit for H-bridge and half-bridge circuits in industrial motor drives, robotics, and high-current DC motor controllers.

DC-DC Converters: Efficiently used in buck and boost converters for renewable energy systems and battery management.

Thermal and Layout Considerations

To maximize the performance of the IPB80N06S2-09, proper PCB layout and thermal management are essential. The TO-263 package offers a low thermal resistance from junction to case (RthJC) and is designed to be mounted on a PCB copper area that acts as an external heat sink. Ensuring a sufficient copper footprint and, if necessary, using active cooling or an additional heatsink is recommended for applications operating at high currents or in elevated ambient temperatures.

ICGOODFIND Summary

The Infineon IPB80N06S2-09 is a high-performance power MOSFET that excels in balancing low conduction losses with fast switching capabilities. Its automotive-grade qualification and robust design make it a reliable and efficient solution for high-current power switching tasks across automotive, industrial, and computing applications. Designers can leverage its low RDS(on) to create compact, efficient, and thermally stable power systems.

Keywords: Power MOSFET, Low RDS(on), Automotive Grade, Synchronous Rectification, High Current Switching.