Infineon BSZ042N06NS: A High-Performance 30V N-Channel MOSFET for Efficient Power Management

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of switching components is paramount. The Infineon BSZ042N06NS stands out as a premier 30V N-Channel MOSFET engineered specifically to meet these demanding challenges. Optimized for a wide range of power management applications, this MOSFET delivers a blend of low losses, high switching speed, and robust reliability, making it an ideal solution for designers.

At the heart of its performance is the advanced OptiMOS™ technology. This proprietary process enables the BSZ042N06NS to achieve an exceptionally low on-state resistance (RDS(on)) of just 2.0 mΩ (max. at VGS = 10 V). This ultra-low RDS(on) is critical for minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and the potential for more compact thermal management solutions. Whether deployed in synchronous rectification, motor control, or load switching, this characteristic ensures more power is delivered to the load and less is wasted as heat.

Furthermore, the device boasts an outstanding figure of merit (FOM), a key indicator of switching performance. The low gate charge (Qg) and low output capacitance (Coss) work in tandem to enable very high-frequency switching operations. This allows power supply designers to push switching frequencies higher, which in turn reduces the size of passive components like inductors and capacitors, leading to smaller overall system size and lower bill-of-material costs.

The BSZ042N06NS is also designed with robustness in mind. Its 30V drain-source voltage rating makes it exceptionally suited for modern low-voltage applications such as server and telecom power supplies, battery management systems (BMS), and DC-DC converters in computing and automotive environments. The device is also qualified according to the highest automotive standards, ensuring reliability under harsh operating conditions.

Packaged in the space-efficient SuperSO8, this MOSFET offers an excellent power-to-footprint ratio. The package's superior thermal characteristics help in effectively dissipating heat, further enhancing the reliability and continuous operation of the end application.

ICGOODFIND: The Infineon BSZ042N06NS is a top-tier 30V MOSFET that sets a high bar for efficiency and power density. Its combination of ultra-low RDS(on), superior switching performance, and automotive-grade robustness makes it an indispensable component for engineers designing the next generation of high-efficiency power management systems.

Keywords: OptiMOS™, Low RDS(on), High-Frequency Switching, Power Management, SuperSO8.