Infineon AUIRFB8405: A High-Performance Automotive MOSFET for Demanding Switching Applications
The relentless drive towards vehicle electrification, from advanced powertrains to sophisticated ADAS features, places unprecedented demands on power electronics. At the heart of these systems, switching components must deliver uncompromising efficiency, robustness, and reliability. The Infineon AUIRFB8405 N-channel power MOSFET stands out as a premier solution engineered specifically to meet these rigorous automotive challenges.
Designed with Infineon's advanced OptiMOS 5 technology, the AUIRFB8405 sets a high bar for performance. Its key attribute is an exceptionally low typical on-state resistance (RDS(on)) of just 2.0 mΩ at a gate voltage of 10 V. This ultra-low resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller cooling systems. This is particularly vital in space-constrained and thermally challenging automotive environments like DC-DC converters, motor control units, and solid-state relays.
Beyond raw efficiency, the device is built for the harsh realities of the automotive world. It is AEC-Q101 qualified, ensuring it meets the stringent reliability standards required for automotive applications. Its robust design features a high maximum drain current (ID) of 520 A, enabling it to handle massive inrush and overload currents with ease. Furthermore, it offers an exceptional avalanche ruggedness, allowing it to safely dissipate energy during voltage transients and inductive switching events, a common occurrence in automotive systems.
The MOSFET is housed in a SuperSO8 package, which provides an excellent balance between compact size and superior thermal and electrical performance. This package is designed for low parasitic inductance, which is essential for minimizing voltage overshoot and ensuring stable operation at high switching frequencies. The combination of high performance and a small footprint makes it an ideal choice for designing power-dense modern electronic control units (ECUs).
In application, the AUIRFB8405 excels in the most demanding roles. It is perfectly suited for use in 48V mild-hybrid systems, electric power steering (EPS), braking systems, and high-current DC-DC converters. Its ability to switch efficiently at high frequencies allows designers to optimize the size of passive components like inductors and capacitors, leading to more compact and cost-effective overall system designs.
ICGOOODFIND: The Infineon AUIRFB8405 is a benchmark automotive-grade MOSFET that delivers a powerful combination of ultra-low RDS(on), high current handling, and superior avalanche ruggedness. Its compliance with automotive standards and excellent switching performance make it a top-tier choice for engineers designing next-generation, high-reliability automotive power systems.
Keywords: Automotive MOSFET, OptiMOS 5, Low RDS(on), AEC-Q101 Qualified, Avalanche Ruggedness
