Infineon SPW47N60C2: High-Performance 650V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. The Infineon SPW47N60C2 stands out as a premier solution, engineered to meet these challenges head-on. As a 650V CoolMOS™ power transistor, it is specifically designed for high-efficiency and high-frequency switching applications, offering a superior blend of performance, reliability, and cost-effectiveness.

At the heart of the SPW47N60C2's performance is Infineon's advanced superjunction (SJ) technology. This technology is the cornerstone of the CoolMOS™ family, enabling a dramatic reduction in on-state resistance (RDS(on)) for a given silicon area. The SPW47N60C2 boasts an exceptionally low RDS(on) of 0.047 Ω, which directly translates to minimized conduction losses. This allows for higher current handling and significantly improved thermal performance, even in compact form factors.

Beyond low conduction losses, the device excels in dynamic performance. It features ultra-low gate charge (Qg) and outstanding switching characteristics. The low gate charge ensures that driving the MOSFET requires less energy from the control IC, simplifying gate drive design and reducing associated switching losses. This makes the SPW47N60C2 exceptionally well-suited for high-frequency operation in circuits like switch-mode power supplies (SMPS), where switching speed is critical for overall efficiency.

The robust 650V voltage rating provides a substantial safety margin for operation in off-line power supplies, including those adhering to 230 VAC mains standards. This built-in headroom enhances system reliability, offering protection against voltage spikes and transients commonly encountered in real-world environments. Furthermore, the transistor incorporates a fast intrinsic body diode with excellent reverse recovery characteristics. This feature is particularly beneficial in bridge topologies and power factor correction (PFC) stages, as it mitigates reverse recovery losses and reduces electromagnetic interference (EMI).

The combination of these attributes makes the SPW47N60C2 an ideal choice for a wide array of demanding applications. It is particularly effective in:

Server & Telecom SMPS: Where high efficiency is paramount for reducing operational costs and cooling requirements.

Industrial Power Systems: Delivering the robustness needed for harsh operating conditions.

Solar Inverters and UPS Systems: Contributing to high conversion efficiency and reliable energy delivery.

Lighting: Enabling efficient and compact designs for professional lighting solutions.

ICGOO

The Infineon SPW47N60C2 CoolMOS™ power transistor is a high-performance cornerstone for modern power electronics. Its optimal balance of extremely low on-resistance, minimal switching losses, and a highly robust 650V design ensures top-tier efficiency and reliability in demanding switching applications, from data centers to industrial drives.

Keywords:

1. CoolMOS™

2. Superjunction Technology

3. Low RDS(on)

4. High-Frequency Switching

5. Efficient Power Conversion