Infineon BAV170E6327: High-Speed Switching Diode for General-Purpose and RF Applications

Release date:2025-11-05 Number of clicks:51

Infineon BAV170E6327: High-Speed Switching Diode for General-Purpose and RF Applications

In the realm of modern electronics, the demand for efficient and reliable components is paramount. The Infineon BAV170E6327 stands out as a quintessential high-speed switching diode, engineered to meet the rigorous requirements of both general-purpose and radio frequency (RF) applications. This diode exemplifies Infineon's commitment to quality, performance, and versatility, making it a preferred choice for designers and engineers worldwide.

Key Features and Technical Specifications

The BAV170E6327 is a double series switching diode encapsulated in a small SOT-23 (SC-79) surface-mount device (SMD) package. This compact form factor is ideal for space-constrained applications while ensuring robust performance. Each diode within the package boasts a reverse voltage (VR) of 70 V and a continuous forward current (IF) of 200 mA, striking a balance between power handling and efficiency.

One of the most critical attributes of this diode is its ultra-fast switching speed. With a reverse recovery time (trr) of only 4 ns, it minimizes switching losses and enhances efficiency in high-frequency circuits. This makes it exceptionally suitable for applications where rapid transitions are crucial. Additionally, the diode exhibits a low forward voltage drop (VF) of approximately 0.9 V at 10 mA, which contributes to reduced power dissipation and improved energy efficiency.

Versatile Application Spectrum

The BAV170E6327's design caters to a broad spectrum of uses. In general-purpose switching, it is commonly employed in digital logic circuits, protection circuits, and clipping/clamping applications. Its fast response ensures signal integrity and reliability.

In the domain of RF applications, this diode shines due to its high-speed characteristics. It is extensively used in mixers, detectors, and modulators within communication systems, such as mobile phones, Wi-Fi modules, and other wireless devices. The diode's ability to operate effectively at high frequencies makes it indispensable for ensuring clear signal processing and transmission.

Robustness and Reliability

Infineon has built a reputation for producing components that endure harsh conditions. The BAV170E6327 is no exception, featuring excellent thermal stability and high surge current capability. Its construction ensures consistent performance across a wide temperature range, from -65 °C to +150 °C, adhering to stringent automotive and industrial standards.

Why Choose the BAV170E6327?

Engineers opt for this diode due to its optimal blend of speed, efficiency, and compactness. Whether in consumer electronics, automotive systems, or industrial controls, the BAV170E6327 provides a reliable solution that enhances circuit performance without compromising on space or power.

ICGOODFIND: The Infineon BAV170E6327 is a superior high-speed switching diode that excels in both general-purpose and RF applications. Its fast switching, low forward voltage, and robust SMD package make it an excellent component for modern electronic designs, ensuring efficiency and reliability across diverse sectors.

Keywords: High-Speed Switching, RF Applications, SOT-23 Package, Low Forward Voltage, Fast Recovery Time.

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