Infineon IPD35N12S3L-24: A High-Performance 12V Synchronous MOSFET for Automotive Applications

The relentless drive towards greater efficiency, reliability, and power density in automotive systems demands components that can perform under the most stringent conditions. At the heart of many of these advancements, particularly in 12V power distribution and switching systems, lies the power MOSFET. The Infineon IPD35N12S3L-24 stands out as a premier solution, engineered specifically to meet the rigorous demands of the modern automobile.

This device is a N-channel power MOSFET built using Infineon's advanced OptiMOS™ technology. With a drain-source voltage (VDS) rating of 24V and a continuous drain current (ID) of 35A at 100°C, it is perfectly suited for the 12V battery network found in all vehicles. Its primary role is often as a low-side switch in synchronous rectification circuits, a critical function in DC-DC converters that power everything from advanced driver-assistance systems (ADAS) and infotainment units to body control modules and lighting.

The exceptional performance of the IPD35N12S3L-24 is rooted in its remarkably low typical on-state resistance (RDS(on)) of just 2.4 mΩ. This ultra-low resistance is the key to its high efficiency, as it minimizes conduction losses, leading to less heat generation and higher overall system efficiency. For automotive applications, this translates directly into reduced fuel consumption in internal combustion engine vehicles and extended range for electric vehicles (EVs), as every watt saved contributes to better energy utilization.

Beyond efficiency, robustness is non-negotiable in the automotive environment. Components must endure extreme temperature fluctuations, voltage spikes, and constant vibration. The IPD35N12S3L-24 is designed for this challenge. It is AEC-Q101 qualified, certifying its reliability for automotive use. Furthermore, its high ruggedness and avalanche robustness ensure it can handle unexpected voltage transients on the board without failure, a common occurrence in the electrically noisy environment of a car.

The package itself, the SuperSO8, contributes significantly to its advantages. This package offers a very low parasitic inductance and an excellent power-to-footprint ratio, allowing for more compact and powerful PCB designs. The exposed pad (EP) enables superior thermal performance by efficiently transferring heat from the silicon die to the circuit board, which is essential for maintaining performance and reliability under high load conditions.

In application, this MOSFET is ideal for use in:

Synchronous rectification in DC-DC buck and boost converters.

Motor control circuits for fans, pumps, and window lifters.

High-current switch mode power supplies (SMPS) within various electronic control units (ECUs).

Load switches for managing power distribution throughout the vehicle.

ICGOOFind: The Infineon IPD35N12S3L-24 is a benchmark for performance in automotive 12V power systems. Its combination of ultra-low RDS(on), high current handling, AEC-Q101 qualification, and robust SuperSO8 packaging makes it an indispensable component for engineers designing next-generation vehicles that prioritize efficiency, compactness, and absolute reliability. It is a clear embodiment of how advanced semiconductor technology is powering the automotive revolution.

Keywords: OptiMOS™, Low RDS(on), AEC-Q101, Synchronous Rectification, Automotive Grade